jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate transistors MMBT2907 transistor (pnp) features z epitaxial planar die construction z complementary npn type available(mmbt2222) marking: m2b maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -continuous -600 ma p d total device dissipation 250 mw t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo* i c =-10ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -20 na base cut-off current i ebo v =-3v, i c =0 -10 na collector cut-off current i cex v ce =-30 v, v be(off) =-0.5v -50 na h fe(1)* v ce =-10v,i c =-150ma 100 300 h fe(2)* v ce =-10v,i c =-0.1ma 52 dc current gain h fe(3) * v ce =-10v,i c =-500ma 32 v ce(sat)* i c =-150ma,i b =-15ma -0.4 v collector-emitter saturation voltage v ce(sat)* i c =-500ma,i b =-50ma -0.67 v v be(sat)* i c =-150ma,i b =-15ma -1 v base-emitter saturation voltage v be(sat)* i c =-500ma,i b =-50ma -1.2 v transition frequency f t v ce =-20v,i c =-50ma,f=100mhz 200 mhz delay time t d 10 n s rise time t r v ce =-30v,i c =-150ma, b1 =-15ma 25 n s storage time t s 225 n s fall time t f v ce =-6v,i c =-150ma, i b1 =- i b2 =- 15ma 60 n s *pulse test: t p 300 s , ? 0.02. sot-23 1. base 2. emitter 3. collector r ja thermal resistance junction to ambient 500 /w www.cj-elec.com 1 a,jun,2014 www.cj-elec.com c,oct,2014 j c ( t eb b,jan,2014
-0 -300 -600 -900 -1200 -0.1 -1 -10 -100 -1 -10 -100 -300 -600 -900 -1200 0 25 50 75 100 125 150 0 50 100 150 200 250 300 -1 -10 -100 -10 -100 -1000 -1 -10 -100 0 100 200 300 400 -0.1 -1 -10 1 10 100 -0 -5 -10 -15 -20 -0 -50 -100 -150 -200 -0 -10 -20 -30 -40 -50 -60 200 300 400 500 common emitter v ce = -10v v be i c ?? base-emmiter voltage v be (mv) collector current i c (ma) t a =2 5 t a = 1 0 0 -600 -600 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) -600 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) -600 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = -10v f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) -20 -720ua -810ua -900ua i b =-90ua common emitter t a =25 collector-emitter voltage v ce (v) collector current i c (ma) static characteristic -450ua -540ua -630ua -180ua -270ua -360ua v ce =-20v t a =25 o c transition frequency f t (mhz) collector current i c (ma) i c f t ?? www.cj-elec.com 2 a,jun,2014 www.cj-elec.com c,oct,2014 7 \ s l f d o & k d u d f w h u l v w l f v b,jan,2014
min m a x min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 a,jun,2014 www.cj-elec.com c,oct,2014
so t -23 tape and reel
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